0.5um 1p2mcmos process platform。0.5um gate length，single poly, double metal，application for led driver，core/io voltage：3.3v～5.0v, （12v, 40v optional）。fmic has the elaborate design rule document，and the spice modeling.
process features
ø core/io voltage：3.3v～5.0v, （12v, 40v optional）. single poly, double metal, twin well.
ø substrate silicon material is p-type <100>, 15-25ohm-cm.
ø 10 masks and 13 photo layers.
ø n-type mask rom code for option.
ø standard locos process for isolation.
ø 125a gate oxide, polycide for gate electrode.
ø nldd, pldd and spacer structure.
ø ti/tin/alsicu/tin stack layer for interconnection.
ø oxide and nitride stack layer for passivation.
ø imd sog planarization process.
ø tungsten plug process.
applications
ø dc-ac converter
ø ldo driver
ø power management product