0.4um cmos process platform。0.4um gate length，single poly, single metal。embedded rc oscillator，crystal oscillator、32*4 bit ram, 368k*10 program rom，voice frequency：1.5k~27k。core/io voltage： 5.0v。fmic has the elaborate design rule document.
process features
ø single poly, single metal, twin well.
ø core/io voltage：3.3~5.0v , vds>5v, vgs>5v
ø substrate silicon material is p-type <100>, 15-25ohm-cm.
ø 11 masks and 14 photo layers.
ø n-type mask rom code for option.
ø standard locos process for isolation.
ø 125a gate oxide, polycide for gate electrode.
ø nldd, pldd and spacer structure.
ø ti/tin/alsicu/tin stack layer for interconnection.
ø oxide and nitride stack layer for passivation
applications
ø rc oscillator， crystal oscillator
ø 32*4 bit ram, 368k*10 program rom
ø voice frequency：1.5k~27k