1.0um 800v process platform integrated lvcmos, mv cmos, hv dmos and other option device such as high resistance poly resistor and zener diodes. it is a good choice for customer to design off-line ac/dc power source and led driver.
process features：
ø integrated 800v power vdmos device, bv higher than 900v.
ø vld (varied lateral doping) for termination can shrink 1/3 chip area.
ø thick and high resistivity epitaxial layer used as starting material.
ø twin well, single poly, single metal, backside grinding and backside metal.
ø 11 masks and 12 photo layers.
ø lv/mv/hv nmos integrated, including asymmetrical and symmetrical structure, enhanced and depletion type.
ø gate oxide capacitor, zener diode, low poly resistor integrated.
ø isolation between high voltage and low voltage devices are reliable.
1) application
ø power management
ø display driver
ø automobile electronics