igbt (insulated gate bipolar transistor) as a new power semiconductor field control self turn-off devices, the device performance with high speed bipolar set power mosfet low resistance in one, get very wide range of applications in a variety of power conversion, fmic has the product technology r & d capability.
process features
ø npt technology
ø collector-emitter voltage：600v～1700v
ø larger drive current
ø low saturation voltage
ø fast switching speed
application
ø induction cooker
ø motor drive
ø electric welding machine
ø inverter